Excitation-induced energy shifts in the optical gain spectra of InN quantum dots
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Date
2009
Authors
Lorke, M.
Seebeck, J.
Gartner, P.
Jahnke, F.
Schulz, Stefan
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AIP Publishing
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Abstract
A microscopic theory for the optical absorption and gain spectra of InN quantum-dot systems is used to study the combined influence of material properties and interaction-induced effects. Atomistic tight-binding calculations for the single-particle properties of the self-assembled quantum-dot and wetting-layer system are used in conjunction with a many-body description of Coulomb interaction and carrier phonon interaction. We analyze the carrier-density and temperature dependence of strong excitation-induced energy shifts of the dipole-allowed quantum-dot transitions.(C) 2009 American Institute of Physics. (10.1063/1.3213543)
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Keywords
Spontaneous emission , Strained wurtzite , Lasers , Semiconductors , Enhancement , FIELD , Carrier density , Electron-phonon interactions , III-V semiconductors , Indium compounds , Infrared spectra , Self-assembly , Semiconductor quantum dots , Tight-binding calculations , Ultraviolet spectra , Visible spectra , Quantum dots , Electrons , Electrostatics , Optical properties
Citation
Lorke, M., Seebeck, J., Gartner, P., Jahnke, F. and Schulz, S. (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters, 95(8), pp. 081108. doi: 10.1063/1.3213543
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© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lorke, M., Seebeck, J., Gartner, P., Jahnke, F. and Schulz, S. (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters, 95(8), pp. 081108 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3213543