Complex emission dynamics of type-II GaSb/GaAs quantum dots

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Date
2009
Authors
Gradkowski, Kamil
Pavarelli, Nicola
Ochalski, Tomasz J.
Williams, David P.
Tatebayashi, Jun
Huyet, Guillaume
O'Reilly, Eoin P.
Huffaker, Diana L.
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AIP Publishing
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Abstract
Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. (C) 2009 American Institute of Physics. (10.1063/1.3202419)
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Keywords
Alloys , Carrier density , Gallium arsenide , Gallium compounds , III-V semiconductors , Photoluminescence , Semiconductor heterojunctions , Semiconductor quantum dots , Time resolved spectra , Quantum dots , Carrier density , Wave functions , Quantum wells
Citation
Gradkowski, K., Pavarelli, N., Ochalski, T. J., Williams, D. P., Tatebayashi, J., Huyet, G., O’Reilly, E. P. and Huffaker, D. L. (2009) 'Complex emission dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 95(6), pp. 061102. doi: 10.1063/1.3202419
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© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gradkowski, K., Pavarelli, N., Ochalski, T. J., Williams, D. P., Tatebayashi, J., Huyet, G., O’Reilly, E. P. and Huffaker, D. L. (2009) 'Complex emission dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 95(6), pp. 061102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3202419