Recovery time scales in a reversed-biased quantum dot absorber
Loading...
Files
Published Version
Date
2009
Authors
Viktorov, Evgeny A.
Erneux, Thomas
Mandel, Paul
Piwonski, Tomasz
Madden, Gillian
Pulka, Jaroslaw
Huyet, Guillaume
Houlihan, John
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3159838)
Description
Keywords
Locked semiconductor-lasers , Gallium arsenide , Indium compounds , Nonlinear optics , Optical fabrication , Optical waveguides , Semiconductor quantum dots , Wetting , Quantum dots , Time resolved spectroscopy , Materials fabrication
Citation
Viktorov, E. A., Erneux, T., Mandel, P., Piwonski, T., Madden, G., Pulka, J., Huyet, G. and Houlihan, J. (2009) 'Recovery time scales in a reversed-biased quantum dot absorber', Applied Physics Letters, 94(26), pp. 263502. doi: 10.1063/1.3159838
Link to publisher’s version
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Viktorov, E. A., Erneux, T., Mandel, P., Piwonski, T., Madden, G., Pulka, J., Huyet, G. and Houlihan, J. (2009) 'Recovery time scales in a reversed-biased quantum dot absorber', Applied Physics Letters, 94(26), pp. 263502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3159838