Intradot dynamics of InAs quantum dot based electroabsorbers
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Date
2009
Authors
Piwonski, Tomasz
Pulka, Jaroslaw
Madden, Gillian
Huyet, Guillaume
Houlihan, John
Viktorov, Evgeny A.
Erneux, Thomas
Mandel, Paul
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AIP Publishing
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Abstract
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3106633)
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Keywords
Lasers , Auger effect , Carrier relaxation time , Electroabsorption , Electro-optical devices , Excited states , Gallium arsenide , Ground states , III-V semiconductors , Indium compounds , Nonlinear optics , Optical materials , Optical waveguides , Phonons , Semiconductor quantum dots , Quantum dots , Wetting , Carrier relaxation times , Excited states
Citation
Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504. doi: 10.1063/1.3106633
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3106633