A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches

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Addendum
Date
2008
Authors
Olszewski, Oskar Zbigniew
Duane, Russell
O'Mahony, Conor
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AIP Publishing
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Abstract
In this letter, we report on the capacitance-voltage (C-V) curve narrowing effect, which occurs in the oxide-based microelectromechanical switches that are subjected to dc bias stress for a prolonged period of time. The narrowing effect for the noncontact dc bias stress condition is shown, which proves that membrane-to-dielectric contact is not needed for narrowing to occur. It is also shown that neither mechanical degradation nor charge trapping due to dielectric conduction or air ionization is solely responsible for the C-V instabilities reported in the literature. (c) 2008 American Institute of Physics (DOI: 10.1063/1.2978159)
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Keywords
Rf mems , Dielectrics , Microelectromechanical systems , Ionization , Ionic conduction , Ion trapping
Citation
Olszewski, Z., Duane, R. and O’Mahony, C. (2008) 'A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches', Applied Physics Letters, 93(9), pp. 094101. doi: 10.1063/1.2978159
Copyright
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Olszewski, Z., Duane, R. and O’Mahony, C. (2008) 'A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches', Applied Physics Letters, 93(9), pp. 094101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2978159