An analysis of 1.55 mu m InAs/InP quantum dash lasers
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Date
2008
Authors
Heck, Susannah C.
Healy, Sorcha B.
Osborne, Simon
O'Reilly, Eoin P.
Lelarge, Francois
Poingt, F.
Accard, A.
Pommereau, F.
Le Gouezigou, O.
Dagens, B.
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Volume Title
Publisher
AIP Publishing
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Abstract
Calculations show that electron states are not confined in the dashes in 1.55 mu m InAs/InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2952194)
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Keywords
Semiconductor-lasers , Amplifiers , Strain , Dots , III-V semiconductors , Band structure , Quantum dots , Quantum wells , Polarization
Citation
Heck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Gouezigou, O. L. and Dagens, B. (2008) 'An analysis of 1.55μm InAs∕InP quantum dash lasers', Applied Physics Letters, 92(25), pp. 251105. doi: 10.1063/1.2952194
Copyright
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Heck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Gouezigou, O. L. and Dagens, B. (2008) 'An analysis of 1.55μm InAs∕InP quantum dash lasers', Applied Physics Letters, 92(25), pp. 251105 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2952194