Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

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Date
2008
Authors
Colinge, Jean-Pierre
Afzalian, Aryan
Lee, Chi-Woo
Yan, Ran
Akhavan, Nima Dehdashti
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AIP Publishing
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Abstract
The minimum energy of the first conduction subband varies with gate voltage in trigate silicon-on-insulator metal-oxide-silicon field-effect transistors (MOSFETs) in subthreshold operation. In an inversion-mode trigate device, the energy level of the lowest subband increases with electron concentration, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory. This effect is not observed in fin-shaped FETs and gate-all-around MOSFETs and can be amplified by modifying the device cross section. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2907330)
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Keywords
Soi mosfets , Gate , Silicon , Field effect transistors , Wave functions , MOSFETs , Electron gas
Citation
Colinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511. doi: 10.1063/1.2907330
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© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2907330