Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium
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Date
2007
Authors
Elam, J. W.
Pellin, M. J.
Elliott, Simon D.
Zydor, Aleksandra
Faia, M. C.
Hupp, J. T.
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AIP Publishing
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Abstract
The mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium and H(2)O was examined using ab initio calculations of hydrolysis energies to predict the order of ligand loss. These predictions were tested using in situ mass spectrometric measurements which revealed that the methyl ligand, and 65% of the methylcyclopentadienyl ligands are lost during the zirconium precursor adsorption. The remaining 35% of the methylcyclopentadienyl ligands and the methoxy ligand are lost during the subsequent H(2)O exposure. These measurements agree very well with the predictions, demonstrating that thermodynamic calculations are a simple and accurate predictor for the reactivities of these compounds. (c) 2007 American Institute of Physics. (DOI: 10.1063/1.2824814)
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Keywords
Precursors , Growth , Silicon , Water , Hfo2 , Zro2 , Atomic layer deposition , Zirconium , Thin film growth , Surface reactions , Hydrogen reactions
Citation
Elam, J. W., Pellin, M. J., Elliott, S. D., Zydor, A., Faia, M. C. and Hupp, J. T. (2007) 'Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium', Applied Physics Letters, 91(25), pp. 253123. doi: 10.1063/1.2824814
Copyright
© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Elam, J. W., Pellin, M. J., Elliott, S. D., Zydor, A., Faia, M. C. and Hupp, J. T. (2007) 'Mechanism for zirconium oxide atomic layer deposition using bis(methylcyclopentadienyl)methoxymethyl zirconium', Applied Physics Letters, 91(25), pp. 253123 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2824814