Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
O'Driscoll, I.; Piwonski, T.; Schleussner, C.-F.; Houlihan, J.; Huyet, G.; Manning, R. J.
Date:
2007
Copyright:
© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2798250
Citation:
O’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111.
Abstract:
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2771374)
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