Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
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Published Version
Date
2007
Authors
O'Driscoll, Ian
Piwonski, Tomasz
Schleussner, C.F.
Houlihan, John
Huyet, Guillaume
Manning, Robert J.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2771374)
Description
Keywords
Quantum dots , Electron capture , III-V semiconductors , Semiconductor optical amplifiers , Ground states
Citation
O’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111. doi: 10.1063/1.2771374
Copyright
© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2798250