Photonic crystal thin films of GaAs prepared by atomic layer deposition
Povey, I. M.; Whitehead, D.; Thomas, K.; Pemble, M. E.; Bardosova, M.; Renard, J.
Date:
2006
Copyright:
© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Povey, I. M., Whitehead, D., Thomas, K., Pemble, M. E., Bardosova, M. and Renard, J. (2006) 'Photonic crystal thin films of GaAs prepared by atomic layer deposition', Applied Physics Letters, 89(10), pp. 104103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2345359
Citation:
Povey, I. M., Whitehead, D., Thomas, K., Pemble, M. E., Bardosova, M. and Renard, J. (2006) 'Photonic crystal thin films of GaAs prepared by atomic layer deposition', Applied Physics Letters, 89(10), pp. 104103.
Abstract:
Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2345359)
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