Thermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriers

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Thermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriers

Ni Chroinin, J; Morrison, AP
Date: 2006
Copyright: © 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2181648
Related: http://aip.scitation.org/doi/abs/10.1063/1.2181648
Citation: Chróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110.
Published Version: 10.1063/1.2181648

Abstract:

A study on thermally activated currents across the bulk and multiquantum barrier (MQB) AlxGa1-xInP/GaInP has been carried out and compared to experimental results from a series of n-i-n diodes over a range of temperatures. By considering the true quantum mechanical nature of the barriers, in contrast to the classical Richardson formalism, it is found that the alloy crossover strongly affects the transport properties of the material. The measured prefactor is found to decrease as Al content is increased. When applied to the MQB structures, the existing model fails to capture the experimental results. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2181648)

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