Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters
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2005
Authors
Andreev, A. D.
O'Reilly, Eoin P.
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AIP Publishing
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Abstract
We present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots (QDs) modeled with a truncated pyramidal shape. We use an eight-band k center dot p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size and shape. For all shapes, the matrix element initially increases with increasing dot height, as the electron and hole wave functions become more localized in k space. Depending on the QD aspect ratio and on the degree of pyramidal truncation, the matrix element then reaches a maximum for some dot shapes at intermediate size beyond which it decreases abruptly in larger dots, where piezoelectric effects lead to a marked reduction in electron-hole overlap. (c) 2005 American Institute of Physics. (DOI:10.1063/1.2130378)
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Keywords
Electronic-structure , Gain , Lasers , Distributions , Operation , Quantum dots , Wave functions , Piezoelectric fields , III-V semiconductors , Ground states
Citation
Andreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106. doi: 10.1063/1.2130378
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© 2005 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Andreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs∕GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2130378