Citation:Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035. doi: 10.1063/1.1835537
We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1835537)
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