Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

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Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

Kelleher, C; Ginige, R; Corbett, B; Clarke, G
Date: 2004
Copyright: © 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1835537
Related: http://aip.scitation.org/doi/abs/10.1063/1.1835537
Citation: Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035.
Published Version: 10.1063/1.1835537

Abstract:

We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1835537)

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