Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

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Date
2004
Authors
Kelleher, Carmel
Ginige, Ravin
Corbett, Brian M.
Clarke, Gerard
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AIP Publishing
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Abstract
We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1835537)
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Keywords
Thermophotovoltaic applications , Solar-cells , Recombination , Multiple quantum wells , Dark currents , Electric currents , Carrier density , Electric measurements
Citation
Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035. doi: 10.1063/1.1835537
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© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1835537