Bistable nanoelectromechanical devices
Ziegler, KJ; Lyons, DM; Holmes, JD; Erts, D; Polyakov, B; Olin, H; Svensson, K; Olsson, E
Date:
2004
Copyright:
© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ziegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1751622
Citation:
Ziegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076.
Abstract:
A combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM) technique has been used to investigate the force interactions of silicon and germanium nanowires with gold electrodes. The I(V) data obtained typically show linear behavior between the gold electrode and silicon nanowires at all contact points, whereas the linearity of I(V) curves obtained for germanium nanowires were dependent on the point of contact. Bistable silicon and germanium nanowire-based nanoelectromechanical programmable read-only memory (NEMPROM) devices were demonstrated by TEM-STM. These nonvolatile NEMPROM devices have switching potentials as low as 1 V and are highly stable making them ideal candidates for low-leakage electronic devices. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1751622)
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