Bistable nanoelectromechanical devices

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dc.contributor.author Ziegler, Kirk J.
dc.contributor.author Lyons, Daniel M.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Erts, Donats
dc.contributor.author Polyakov, Boris
dc.contributor.author Olin, H.
dc.contributor.author Svensson, K.
dc.contributor.author Olsson, E.
dc.date.accessioned 2017-07-28T13:29:54Z
dc.date.available 2017-07-28T13:29:54Z
dc.date.issued 2004
dc.identifier.citation Ziegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076. doi: 10.1063/1.1751622 en
dc.identifier.volume 84
dc.identifier.issued 20
dc.identifier.startpage 4074
dc.identifier.endpage 4076
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4398
dc.identifier.doi 10.1063/1.1751622
dc.description.abstract A combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM) technique has been used to investigate the force interactions of silicon and germanium nanowires with gold electrodes. The I(V) data obtained typically show linear behavior between the gold electrode and silicon nanowires at all contact points, whereas the linearity of I(V) curves obtained for germanium nanowires were dependent on the point of contact. Bistable silicon and germanium nanowire-based nanoelectromechanical programmable read-only memory (NEMPROM) devices were demonstrated by TEM-STM. These nonvolatile NEMPROM devices have switching potentials as low as 1 V and are highly stable making them ideal candidates for low-leakage electronic devices. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1751622) en
dc.description.sponsorship Enterprise Ireland (Postdoctoral fellowship); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1751622
dc.rights © 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ziegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1751622 en
dc.subject Nanowire building-blocks en
dc.subject Atomic-force microscopy en
dc.subject Carbon-nanotube en
dc.subject Electronic devices en
dc.subject Conductance en
dc.subject Frequency en
dc.subject Contact en
dc.subject Memory en
dc.subject Single en
dc.subject Logic en
dc.subject Elemental semiconductors en
dc.subject Silicon en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Nanoelectromechanical systems en
dc.title Bistable nanoelectromechanical devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000221269800040
dc.contributor.funder Enterprise Ireland
dc.contributor.funder Higher Education Authority
dc.contributor.funder Latvijas Zinātnes Padome
dc.contributor.funder Latvijas Universitate
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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