Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure

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dc.contributor.author Andreev, A. D.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-28T13:29:54Z
dc.date.available 2017-07-28T13:29:54Z
dc.date.issued 2004
dc.identifier.citation Andreev, A. D. and O’Reilly, E. P. (2004) 'Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure', Applied Physics Letters, 84(11), pp. 1826-1828. doi: 10.1063/1.1664033 en
dc.identifier.volume 84
dc.identifier.issued 11
dc.identifier.startpage 1826
dc.identifier.endpage 1828
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4399
dc.identifier.doi 10.1063/1.1664033
dc.description.abstract We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 mum laser emission. The calculations are based on a 10x10 k.p model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We consider two main Auger recombination channels: the process when the energy released from the electron-hole recombination causes electron excitation (CHCC process) and the process with hole excitation to the split-off valence band (CHHS process). The CHHS process is shown to be dominant. Good agreement is found when comparing the calculated Auger rates with experimental values of the Auger contribution to the threshold current of GaInNAs quantum well lasers. (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1664033) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1664033
dc.rights © 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Andreev, A. D. and O’Reilly, E. P. (2004) 'Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure', Applied Physics Letters, 84(11), pp. 1826-1828 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1664033 en
dc.subject Temperature-dependence en
dc.subject Threshold current en
dc.subject Superlattices en
dc.subject Optimization en
dc.subject Performance en
dc.subject Pressure en
dc.subject Laser theory en
dc.subject Quantum well lasers en
dc.subject Band models en
dc.subject Valence bands en
dc.subject Quantum wells en
dc.title Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin P. O'Reilly, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000220182600004
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en


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