Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states
Uskov, AV; O'Reilly, EP; McPeake, D; Ledentsov, NN; Bimberg, D; Huyet, G
Date:
2004
Copyright:
© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1639933
Citation:
Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274.
Abstract:
The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, alpha, show that alphasimilar to1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies similar to0.8-1.0 eV due to these transitions can be on the order of 10(3) m(-1). (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1639933)
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