Si/SiGe electron resonant tunneling diodes with graded spacer wells
Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, Barry P.; Redmond, Gareth; Crean, Gabriel M.; Zozoulenko, I. V.; Berggren, K. F.; Hollander, B.; Mantl, S.
Date:
2001
Copyright:
© 2001 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Paul, D. J., See, P., Bates, R., Griffin, N., Coonan, B. P., Redmond, G., Crean, G. M., Zozoulenko, I. V., Berggren, K.-F., Holländer, B. and Mantl, S. (2001) 'Si/SiGe electron resonant tunneling diodes with graded spacer wells', Applied Physics Letters, 78(26), pp. 4184-4186 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1381042
Citation:
Paul, D. J., See, P., Bates, R., Griffin, N., Coonan, B. P., Redmond, G., Crean, G. M., Zozoulenko, I. V., Berggren, K.-F., Holländer, B. and Mantl, S. (2001) 'Si/SiGe electron resonant tunneling diodes with graded spacer wells', Applied Physics Letters, 78(26), pp. 4184-4186. doi: 10.1063/1.1381042
Abstract:
Resonant tunneling diodes have been fabricated using graded Si(1-x)Ge(x) (x=0.3 -->0.0) spacer wells and strained Si(0.4)Ge(0.6) barriers on a relaxed Si(0.7)Ge(0.3) n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm(2) with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. (C) 2001 American Institute of Physics. (DOI: 10.1063/1.1381042)
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