Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector
Sinnis, VS; Seto, M; 't Hooft, GW; Watabe, Y; Morrison, AP; Hoekstra, W; de Boer, WB
Date:
1999
Copyright:
© 1999 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.123499
Citation:
Sinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205.
Abstract:
We report on a silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and antiresonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 and 709 nm. The leakage current density is 85 pA/mm(2) at -5 V, and the average zero-bias capacitance is 12 pF/mm(2). We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response. (C) 1999 American Institute of Physics. (DOI: 10.1063/1.123499).
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