Observation of insulating nanoislands in ferromagnetic GaMnAs
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Published Version
Date
2009
Authors
Wang, D. M.
Ren, Y. H.
Jacobs, P. W.
Fahy, Stephen B.
Liu, X.
Furdyna, J. K.
Sapega, V. F.
Merlin, Roberto
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society
Published Version
Abstract
Resonant Raman data on ferromagnetic GaMnAs reveal the existence of a new kind of defect: insulating nanoislands consisting of substitutional Mn-Ga acceptors surrounded by interstitial Mn-I donors. As indicated by the observation of a sharp 1S(3/2)-> 2S(3/2) Raman transition at similar to 703 cm(-1), the acceptor-bound holes inside the islands are isolated from the metallic surroundings. Instead, Mn-bound excitons do couple to the ferromagnetic environment, as shown by the presence of associated Raman magnon side bands. This leads to an estimate of 5-10 nm for the nanoisland radius. The islands disappear after annealing due to the removal of the Mn-I ions.
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Keywords
Electronic structure , Bulk gaAs , Mn , Ga1-xMnxAs , Semiconductors , Spectroscopy , Temperature , Acceptor , Raman
Citation
Wang, D. M., Ren, Y. H., Jacobs, P. W., Fahy, S., Liu, X., Furdyna, J. K., Sapega, V. F. and Merlin, R. (2009) 'Observation of insulating nanoislands in ferromagnetic GaMnAs', Physical Review Letters, 102(25), 256401 (4pp). doi: 10.1103/PhysRevLett.102.256401
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© 2009, American Physical Society