Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

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dc.contributor.author Kesim, M. T.
dc.contributor.author Zhang, J.
dc.contributor.author Trolier-McKinstry, S.
dc.contributor.author Mantese, J. V.
dc.contributor.author Whatmore, Roger W.
dc.contributor.author Alpay, S. P.
dc.date.accessioned 2017-09-20T10:06:32Z
dc.date.available 2017-09-20T10:06:32Z
dc.date.issued 2013
dc.identifier.citation Kesim, M. T., Zhang, J., Trolier-McKinstry, S., Mantese, J. V., Whatmore, R. W. and Alpay, S. P. (2013) 'Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses', Journal of Applied Physics, 114(20), 204101 (7pp). doi: 10.1063/1.4833555 en
dc.identifier.volume 114
dc.identifier.issued 20
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4719
dc.identifier.doi 10.1063/1.4833555
dc.description.abstract Ferroelectric lead zirconate titanate [Pb(ZrxTi1-xO)(3), (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 degrees C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 mu C cm(-2)degrees C-1, comparable to bulk values) at a growth temperature of 550 degrees C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process. (C) 2013 AIP Publishing LLC. en
dc.description.sponsorship National Science Foundation [ECS-0335765] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.4833555
dc.rights © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kesim, M. T., Zhang, J., Trolier-McKinstry, S., Mantese, J. V., Whatmore, R. W. and Alpay, S. P. (2013) 'Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses', Journal of Applied Physics, 114(20), 204101 (7pp). doi: 10.1063/1.4833555 and may be found at http://aip.scitation.org/doi/10.1063/1.4833555 en
dc.subject Lead zirconate titanate en
dc.subject Pyroelectric effects en
dc.subject Polarization en
dc.subject Thin film devices en
dc.subject PZT films en
dc.title Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Roger W. Whatmore, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: roger.whatmore@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Materials Research Institute, Pennsylvania State University
dc.contributor.funder National Science Foundation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress roger.whatmore@tyndall.ie en
dc.identifier.articleid 204101


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