Influence of channel material properties on performance of nanowire transistors

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2012
Authors
Razavi, Pedram
Fagas, Gíorgos
Ferain, Isabelle
Yu, Ran
Das, Samaresh
Colinge, Jean-Pierre
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AIP Publishing
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Abstract
The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I-on/I-off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729777]
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Keywords
Elemental semiconductors , Nanowires , Germanium , Tunneling , Effective mass
Citation
Razavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777
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© 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Razavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777 and may be found at http://aip.scitation.org/doi/10.1063/1.4729777