Wettability and "petal effect" of GaAs native oxides

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2011
Authors
Gocalińska, Agnieszka M.
Gradkowski, Kamil
Dimastrodonato, Valeria
Mereni, L. O.
Juska, Gediminas
Huyet, Guillaume
Pelucchi, Emanuele
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AIP Publishing
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Abstract
We discuss unreported transitions of oxidized GaAs surfaces between (super) hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90 degrees and high adhesive force were observed for several air-aged epitaxial samples grown under different conditions as well as on epi-ready wafers. Regardless of the morphologies of the surface, superhydrophilicity of oxygen-plasma treated samples was observed, an effect disappearing with storage time. Reproducible hydrophobicity was likewise observed, as expected, after standard HCl surface etching. The relation between surface oxides and hydrophobic/hydrophilic behavior is discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619797]
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Keywords
III-V semiconductors , Hydrophobic interactions , Epitaxy , Surface morphology , Oxide surfaces
Citation
Gocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797
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© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797 and may be found at http://aip.scitation.org/doi/10.1063/1.3619797