Wettability and "petal effect" of GaAs native oxides

Show simple item record

dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Gradkowski, Kamil
dc.contributor.author Dimastrodonato, Valeria
dc.contributor.author Mereni, L. O.
dc.contributor.author Juska, Gediminas
dc.contributor.author Huyet, Guillaume
dc.contributor.author Pelucchi, Emanuele
dc.date.accessioned 2017-09-20T10:06:34Z
dc.date.available 2017-09-20T10:06:34Z
dc.date.issued 2011
dc.identifier.citation Gocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797 en
dc.identifier.volume 110
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4735
dc.identifier.doi 10.1063/1.3619797
dc.description.abstract We discuss unreported transitions of oxidized GaAs surfaces between (super) hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90 degrees and high adhesive force were observed for several air-aged epitaxial samples grown under different conditions as well as on epi-ready wafers. Regardless of the morphologies of the surface, superhydrophilicity of oxygen-plasma treated samples was observed, an effect disappearing with storage time. Reproducible hydrophobicity was likewise observed, as expected, after standard HCl surface etching. The relation between surface oxides and hydrophobic/hydrophilic behavior is discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619797] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3619797
dc.rights © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797 and may be found at http://aip.scitation.org/doi/10.1063/1.3619797 en
dc.subject III-V semiconductors en
dc.subject Hydrophobic interactions en
dc.subject Epitaxy en
dc.subject Surface morphology en
dc.subject Oxide surfaces en
dc.title Wettability and "petal effect" of GaAs native oxides en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Agnieszka Gocalinska, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: agnieszka.gocalinska@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Higher Education Authority
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress agnieszka.gocalinska@tyndall.ie en
dc.identifier.articleid 34319


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement