Low temperature exfoliation process in hydrogen-implanted germanium layers

Show simple item record

dc.contributor.author Ferain, Isabelle
dc.contributor.author Byun, Ki Yeol
dc.contributor.author Colinge, Cindy
dc.contributor.author Brightup, S.
dc.contributor.author Goorsky, M. S.
dc.date.accessioned 2017-09-20T10:06:35Z
dc.date.available 2017-09-20T10:06:35Z
dc.date.issued 2010
dc.identifier.citation Ferain, I. P., Byun, K. Y., Colinge, C. A., Brightup, S. and Goorsky, M. S. (2010) 'Low temperature exfoliation process in hydrogen-implanted germanium layers', Journal of Applied Physics, 107(5), 054315 (5pp). doi: 10.1063/1.3326942 en
dc.identifier.volume 107
dc.identifier.issued 5
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4746
dc.identifier.doi 10.1063/1.3326942
dc.description.abstract The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (<= 150 degrees C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 degrees C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 degrees C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3326942] en
dc.description.sponsorship Science Foundation Ireland [08/W.1/12597] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3326942
dc.rights © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ferain, I. P., Byun, K. Y., Colinge, C. A., Brightup, S. and Goorsky, M. S. (2010) 'Low temperature exfoliation process in hydrogen-implanted germanium layers', Journal of Applied Physics, 107(5), 054315 (5pp). doi: 10.1063/1.3326942 and may be found at http://aip.scitation.org/doi/10.1063/1.3326942 en
dc.subject Germanium en
dc.subject Annealing en
dc.subject Elemental semiconductors en
dc.subject Nucleation en
dc.subject X-ray diffraction en
dc.title Low temperature exfoliation process in hydrogen-implanted germanium layers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Isabelle Ferain, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: isabelle.ferain@gmail.com en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Seventh Framework Programme
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress isabelle.ferain@gmail.com en
dc.identifier.articleid 54315
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement