Delay induced high order locking effects in semiconductor lasers

Show simple item record Kelleher, Bryan Wishon, M. J. Locquet, A. Goulding, David Tykalewicz, Boguslaw Huyet, Guillaume Viktorov, E. A. 2017-11-20T12:25:26Z 2017-11-20T12:25:26Z 2017-11-09
dc.identifier.citation Kelleher, B., Wishon, M. J., Locquet, A., Goulding, D., Tykalewicz, B., Huyet, G. and Viktorov, E. A. (2017) 'Delay induced high order locking effects in semiconductor lasers', Chaos, 27, 114325 (9pp). doi:10.1063/1.4994029 en
dc.identifier.volume 27 en
dc.identifier.startpage 1 en
dc.identifier.endpage 9 en
dc.identifier.issn 1054-1500
dc.identifier.issn 1089-7682
dc.identifier.doi 10.1063/1.4994029
dc.description.abstract Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing
dc.rights © 2017, the Authors. Reproduced with the permission of AIP Publishing. en
dc.subject Semiconductor laser en
dc.subject Cavity repetition rate en
dc.subject Spontaneous mode-locking en
dc.subject Quantum dot en
dc.subject Quantum well devices en
dc.subject Relaxation oscillations en
dc.subject Chemical reactions en
dc.subject Radiofrequency spectroscopy en
dc.subject Photodetectors en
dc.title Delay induced high order locking effects in semiconductor lasers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother David Goulding, Occasional Staff, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 12 months after publication by request of the publisher. en 2018-11-09 2017-11-20T12:09:18Z
dc.description.version Published Version en
dc.internal.rssid 419556509
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chaos en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.identifier.articleid 114325

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