Access to this article is restricted until 12 months after publication by request of the publisher.. Restriction lift date: 2018-11-14
Rhenium-doped MoS2 films
Loading...
Files
Published version
Date
2017-11-14
Authors
Hallam, Toby
Monaghan, Scott
Gity, Farzan
Ansari, Lida
Schmidt, Michael
Downing, Clive
Cullen, Conor P.
Nicolosi, Valeria
Hurley, Paul K.
Duesberg, Georg S.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.
Description
Keywords
Energy dispersive x-ray spectroscopy , Electron microscopy , Density functional theory , Hall effect , Interstitials , Molybdenum compounds , Rhenium , Scanning-transmission electron microscopy , Semiconductor doping , Semiconductor materials , Semiconductor thin films , Vacancies (crystal) , X-ray chemical analysis
Citation
Hallam, T., Monaghan, S., Gity, F., Ansari, L., Schmidt, M., Downing, C., Cullen, C. P., Nicolosi, V., Hurley, P. K. and Duesberg, G. S. (2017) 'Rhenium-doped MoS2 films', Applied Physics Letters, 111(20), 203101 (5 pp). doi: 10.1063/1.4995220
Link to publisher’s version
Copyright
© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 2017 111:20 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4995220