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Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
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Accepted version
Date
2017-12-14
Authors
Cao, Jiang
Logoteta, Demetrio
Pala, Marco G.
Cresti, Alessandro
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.
Description
Keywords
Tunnel field-effect-transistor , Non-equilibrium Green’s function , 2D transition metal dichalcogenides , van der Waals heterostructures
Citation
Cao, J., Logoteta, D., Pala, M. G. and Cresti, A. (2017) ‘Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors’, Journal of Physics D: Applied Physics, In Press, doi: 10.1088/1361-6463/aaa1b6