Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

dc.check.date2018-12-14
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorCao, Jiang
dc.contributor.authorLogoteta, Demetrio
dc.contributor.authorPala, Marco G.
dc.contributor.authorCresti, Alessandro
dc.contributor.funderAgence Nationale de la Rechercheen
dc.date.accessioned2018-01-09T15:06:28Z
dc.date.available2018-01-09T15:06:28Z
dc.date.issued2017-12-14
dc.description.abstractWe numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.en
dc.description.sponsorshipAgence Nationale de la Recherche (project n. ANR-13-NANO0009-01 “NOODLES”)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCao, J., Logoteta, D., Pala, M. G. and Cresti, A. (2017) ‘Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors’, Journal of Physics D: Applied Physics, In Press, doi: 10.1088/1361-6463/aaa1b6en
dc.identifier.doi10.1088/1361-6463/aaa1b6
dc.identifier.endpage12en
dc.identifier.issn0022-3727
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/5252
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in J. Phys. D: Appl. Phys. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aaa1b6. As the Version of Record of this article is published on a subscription basis, this Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0en
dc.subjectTunnel field-effect-transistoren
dc.subjectNon-equilibrium Green’s functionen
dc.subject2D transition metal dichalcogenidesen
dc.subjectvan der Waals heterostructuresen
dc.titleImpact of momentum mismatch on 2D van der Waals tunnel field-effect transistorsen
dc.typeArticle (peer-reviewed)en
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