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Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
Pala, Marco G.
We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.
Tunnel field-effect-transistor , Non-equilibrium Green’s function , 2D transition metal dichalcogenides , van der Waals heterostructures
Cao, J., Logoteta, D., Pala, M. G. and Cresti, A. (2017) ‘Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors’, Journal of Physics D: Applied Physics, In Press, doi: 10.1088/1361-6463/aaa1b6
© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in J. Phys. D: Appl. Phys. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aaa1b6. As the Version of Record of this article is published on a subscription basis, this Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period.