Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach
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Date
2015-11-24
Authors
Conroy, Michele
Zubialevich, Vitaly Z.
Li, Haoning
Petkov, Nikolay
O'Donoghue, Sally
Holmes, Justin D.
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society
Published Version
Abstract
Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.
Description
Keywords
Aluminum nitride , Growth mechanism , III-nitrides , Nanorods , Nanowires
Citation
Conroy, M., Zubialevich, V. Z., Li, H., Petkov, N., O’Donoghue, S., Holmes, J. D. and Parbrook, P. J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach', ACS Nano, 10(2), pp. 1988-1994. doi:10.1021/acsnano.5b06062
Link to publisher’s version
Copyright
© 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06062