Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach

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Date
2015-11-24
Authors
Conroy, Michele
Zubialevich, Vitaly Z.
Li, Haoning
Petkov, Nikolay
O'Donoghue, Sally
Holmes, Justin D.
Parbrook, Peter J.
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American Chemical Society
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Abstract
Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.
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Keywords
Aluminum nitride , Growth mechanism , III-nitrides , Nanorods , Nanowires
Citation
Conroy, M., Zubialevich, V. Z., Li, H., Petkov, N., O’Donoghue, S., Holmes, J. D. and Parbrook, P. J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach', ACS Nano, 10(2), pp. 1988-1994. doi:10.1021/acsnano.5b06062
Copyright
© 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06062