Size-dependent bandwidth of semipolar (1122) light-emitting-diodes

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dc.contributor.author Haemmer, M.
dc.contributor.author Roycroft, Brendan
dc.contributor.author Akhter, Mahbub
dc.contributor.author Dinh, Duc V.
dc.contributor.author Quan, Zhiheng
dc.contributor.author Zhao, Jian
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2018-03-09T12:55:07Z
dc.date.available 2018-03-09T12:55:07Z
dc.date.issued 2018
dc.identifier.citation Haemmer, M., Roycroft, B., Akhter, M., Dinh, D. V., Quan, Z., Zhao, J., Parbrook, P. J. and Corbett, B. (2018) 'Size-dependent bandwidth of semipolar (1122) light-emitting-diodes', IEEE Photonics Technology Letters, 30(5), pp. 439-442. doi: 10.1109/LPT.2018.2794444 en
dc.identifier.volume 30
dc.identifier.issued 5
dc.identifier.startpage 439
dc.identifier.endpage 442
dc.identifier.issn 1041-1135
dc.identifier.uri http://hdl.handle.net/10468/5609
dc.identifier.doi 10.1109/LPT.2018.2794444
dc.description.abstract The limited modulation bandwidth of commercial light-emitting diodes (LEDs) is one of the critical bottlenecks for visible light communications. Possible approaches to increase the bandwidth include the use of micron sized LEDs, which can withstand higher current densities, as well as the use of LED structures that are grown on different crystal planes to the conventional polar c-plane. We compare c-plane InGaN/GaN LEDs with semipolar ( 112¯¯¯2 ) LEDs containing a 4- and 8-nm single quantum well. The modulation bandwidth of semipolar LEDs with active areas varying from 200×200 to 30×30μm2 is shown to be governed by both current density and size. A small signal bandwidth of over 800 MHz for a relatively low applied current density of 385 A/cm2 is reported for 30×30μm2 LEDs with 8-nm thick quantum well. An optical link using an easy non-return-to-zero ON–OFF keying modulation scheme with a data rate of 1.5 Gb/s is demonstrated. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers Inc. en
dc.relation.uri http://ieeexplore.ieee.org/document/8274939/
dc.rights © 2018, IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. en
dc.rights.uri https://www.ieee.org/publications_standards/publications/rights/index.html
dc.subject Light emitting diodes en
dc.subject Bandwidth en
dc.subject Current density en
dc.subject Modulation en
dc.subject Frequency response en
dc.subject Radiative recombination en
dc.subject Resistance en
dc.title Size-dependent bandwidth of semipolar (1122) light-emitting-diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Brian Corbett, Tyndall National Institute, University College Cork, Cork, Ireland. +353 214904380. Email: brian.corbett@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Photonics Technology Letters en


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