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Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Kappers, M. J.
Humphreys, C. J.
In this paper we report on changes in the form of the low temperature (12K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisations sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.
Photon energy , Photoluminescence spectra , InGaN/GaN quantum well structure , Excitation
Blenkhorn, W., Schulz, S., Tanner, D., Oliver, R., Kappers, M. J., Humphreys, C. J. and Dawson, P. (2018) Journal of Physics: Condensed Matter, In Press, doi: 10.1088/1361-648X/aab818
© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/10.1088/1361-648X/aab818. As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.