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Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters
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Date
2017-09-05
Authors
Patra, Saroj K.
Schulz, Stefan
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Publisher
AIP Publishing
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Abstract
In this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is paid to the impact of increasing In content x on the results. We find that in general the second-order piezoelectric effect leads to an increase in the electrostatic built-in field. Furthermore, our results show that for an In content 30%, this increase in the built-in field has a significant effect on the emission wavelength and the radiative lifetimes. For instance, at 40% In, the radiative lifetime is more than doubled when taking second-order piezoelectricity into account. Overall, our calculations reveal that when designing and describing the electronic and optical properties of c-plane InxGa1xN/GaN quantum dot based light emitters with high In contents, second-order piezoelectric effects cannot be neglected.
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Keywords
Second-order piezoelectric effect , Electrostatic built-in field , Emission wavelength , Radiative lifetime
Citation
Patra, S. K. and Schulz, S. (2017) 'Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters', Applied Physics Letters, 111(10), 103103 (5pp). doi:10.1063/1.4991720
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Copyright
© 2017, the Authors. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. The following article appeared in Patra, S. K. and Schulz, S., Applied Physics Letters, 111(10), 103103 (5pp), and may be found at http://dx.doi.org/10.1063/1.4991720