dc.contributor.author |
Tolloczko, Agata |
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dc.contributor.author |
Kopaczek, Jan |
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dc.contributor.author |
Szukiewicz, Rafal |
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dc.contributor.author |
Gocalińska, Agnieszka M. |
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dc.contributor.author |
Pelucchi, Emanuele |
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dc.contributor.author |
Hommel, Detlef |
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dc.contributor.author |
Kudrawiec, Robert |
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dc.date.accessioned |
2018-04-25T13:38:53Z |
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dc.date.available |
2018-04-25T13:38:53Z |
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dc.date.issued |
2018-04-19 |
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dc.identifier.citation |
Tolloczko, A., Kopaczek, J., Szukiewicz, R., Gocalinska, A., Pelucchi, E., Hommel, D. and Kudrawiec, R.(2018) 'Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP', Journal of Physics D: Applied Physics, In Press, doi:10.1088/1361-6463/aabf6b |
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dc.identifier.startpage |
1 |
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dc.identifier.endpage |
24 |
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dc.identifier.issn |
1361-6463 |
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dc.identifier.issn |
0022-3727 |
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dc.identifier.uri |
http://hdl.handle.net/10468/5873 |
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dc.identifier.doi |
10.1088/1361-6463/aabf6b |
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dc.description.abstract |
N-type and p-type In0.52Al0.48As van Hoof structures with various thicknesses of undoped In0.52Al0.48As layer (30, 60, 90, and 120 nm) were grown by metal-organic vapor phase epitaxy on InP substrates and studied by contactless electroreflectance (CER) at room temperature. The InAlAs bandgap related CER resonance followed by a strong Franz-Keldysh oscillation (FKO) of various periods was observed clearly for the two structures. This period was decreased with the decrease of thickness of undoped In0.52Al0.48As layer and was slightly narrower for p-type structures. The FKO period analysis indicates that the Fermi level is pinned 0.730.02 eV below the conduction band at In0.52Al0.48As surface. This pinning was attributed to the surface reconstruction combined with the adsorption of oxygen and carbon atoms (consequence of air exposure) which were detected on the In0.52Al0.48As surface by X-ray photoelectron spectroscopy. Also, CER measurements repeated one year after the sample growth shows that the process of InAlAs oxidation in laboratory ambient is negligible and therefore this alloy can be used as a protective cap layer in InP-based heterostructures. |
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dc.description.sponsorship |
Science Foundation Ireland (SFI grants 12/RC/2276, 10/IN.1/I3000 and 15/IA/2864) |
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dc.format.mimetype |
application/pdf |
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dc.language.iso |
en |
en |
dc.publisher |
IOP Publishing |
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dc.relation.uri |
http://iopscience.iop.org/article/10.1088/1361-6463/aabf6b |
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dc.rights |
© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aabf6b. |
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dc.rights.uri |
http://creativecommons.org/licenses/by-nc-nd/3.0/ |
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dc.subject |
van Hoof structures |
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dc.subject |
Spectroscopy |
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dc.subject |
X-ray photoelectron spectroscop |
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dc.subject |
adsorption |
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dc.subject |
Contactless electroreflectance |
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dc.subject |
CER |
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dc.title |
Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Agnieszka Gocalinska, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: a.gocalinska@ucc.ie |
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dc.internal.availability |
Full text available |
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dc.check.info |
Access to this article is restricted until 12 months after publication by request of the publisher. |
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dc.check.date |
2019-04-19 |
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dc.date.updated |
2018-04-25T10:50:09Z |
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dc.description.version |
Accepted Version |
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dc.internal.rssid |
435214027 |
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dc.contributor.funder |
Science Foundation Ireland
|
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dc.description.status |
Peer reviewed |
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dc.identifier.journaltitle |
Journal of Physics D: Applied Physics |
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dc.internal.copyrightchecked |
No !!CORA!! |
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dc.internal.licenseacceptance |
Yes |
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dc.internal.IRISemailaddress |
a.gocalinska@ucc.ie |
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dc.internal.bibliocheck |
In Press April 2018. Update citation details. Check funder project code. Add vol. issus, page nos. |
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dc.relation.project |
info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/
|
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dc.relation.project |
info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I3000/IE/Controlling deterministically engineered III-V nanostructures: towards quantum information devices/
|
en |