Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP

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dc.contributor.author Tolloczko, Agata
dc.contributor.author Kopaczek, Jan
dc.contributor.author Szukiewicz, Rafal
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Hommel, Detlef
dc.contributor.author Kudrawiec, Robert
dc.date.accessioned 2018-04-25T13:38:53Z
dc.date.available 2018-04-25T13:38:53Z
dc.date.issued 2018-04-19
dc.identifier.citation Tolloczko, A., Kopaczek, J., Szukiewicz, R., Gocalinska, A., Pelucchi, E., Hommel, D. and Kudrawiec, R.(2018) 'Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP', Journal of Physics D: Applied Physics, In Press, doi:10.1088/1361-6463/aabf6b en
dc.identifier.startpage 1 en
dc.identifier.endpage 24 en
dc.identifier.issn 1361-6463
dc.identifier.issn 0022-3727
dc.identifier.uri http://hdl.handle.net/10468/5873
dc.identifier.doi 10.1088/1361-6463/aabf6b
dc.description.abstract N-type and p-type In0.52Al0.48As van Hoof structures with various thicknesses of undoped In0.52Al0.48As layer (30, 60, 90, and 120 nm) were grown by metal-organic vapor phase epitaxy on InP substrates and studied by contactless electroreflectance (CER) at room temperature. The InAlAs bandgap related CER resonance followed by a strong Franz-Keldysh oscillation (FKO) of various periods was observed clearly for the two structures. This period was decreased with the decrease of thickness of undoped In0.52Al0.48As layer and was slightly narrower for p-type structures. The FKO period analysis indicates that the Fermi level is pinned 0.730.02 eV below the conduction band at In0.52Al0.48As surface. This pinning was attributed to the surface reconstruction combined with the adsorption of oxygen and carbon atoms (consequence of air exposure) which were detected on the In0.52Al0.48As surface by X-ray photoelectron spectroscopy. Also, CER measurements repeated one year after the sample growth shows that the process of InAlAs oxidation in laboratory ambient is negligible and therefore this alloy can be used as a protective cap layer in InP-based heterostructures. en
dc.description.sponsorship Science Foundation Ireland (SFI grants 12/RC/2276, 10/IN.1/I3000 and 15/IA/2864) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/article/10.1088/1361-6463/aabf6b
dc.rights © 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aabf6b. en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject van Hoof structures en
dc.subject Spectroscopy en
dc.subject X-ray photoelectron spectroscop en
dc.subject adsorption en
dc.subject Contactless electroreflectance en
dc.subject CER en
dc.title Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Agnieszka Gocalinska, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: a.gocalinska@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2019-04-19
dc.date.updated 2018-04-25T10:50:09Z
dc.description.version Accepted Version en
dc.internal.rssid 435214027
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Physics D: Applied Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress a.gocalinska@ucc.ie en
dc.internal.bibliocheck In Press April 2018. Update citation details. Check funder project code. Add vol. issus, page nos. en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I3000/IE/Controlling deterministically engineered III-V nanostructures: towards quantum information devices/ en


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© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aabf6b. Except where otherwise noted, this item's license is described as © 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aabf6b.
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