Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP

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dc.check.date2019-04-19
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorTolloczko, Agata
dc.contributor.authorKopaczek, Jan
dc.contributor.authorSzukiewicz, Rafal
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorHommel, Detlef
dc.contributor.authorKudrawiec, Robert
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-04-25T13:38:53Z
dc.date.available2018-04-25T13:38:53Z
dc.date.issued2018-04-19
dc.date.updated2018-04-25T10:50:09Z
dc.description.abstractN-type and p-type In0.52Al0.48As van Hoof structures with various thicknesses of undoped In0.52Al0.48As layer (30, 60, 90, and 120 nm) were grown by metal-organic vapor phase epitaxy on InP substrates and studied by contactless electroreflectance (CER) at room temperature. The InAlAs bandgap related CER resonance followed by a strong Franz-Keldysh oscillation (FKO) of various periods was observed clearly for the two structures. This period was decreased with the decrease of thickness of undoped In0.52Al0.48As layer and was slightly narrower for p-type structures. The FKO period analysis indicates that the Fermi level is pinned 0.730.02 eV below the conduction band at In0.52Al0.48As surface. This pinning was attributed to the surface reconstruction combined with the adsorption of oxygen and carbon atoms (consequence of air exposure) which were detected on the In0.52Al0.48As surface by X-ray photoelectron spectroscopy. Also, CER measurements repeated one year after the sample growth shows that the process of InAlAs oxidation in laboratory ambient is negligible and therefore this alloy can be used as a protective cap layer in InP-based heterostructures.en
dc.description.sponsorshipScience Foundation Ireland (SFI grants 12/RC/2276, 10/IN.1/I3000 and 15/IA/2864)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTolloczko, A., Kopaczek, J., Szukiewicz, R., Gocalinska, A., Pelucchi, E., Hommel, D. and Kudrawiec, R.(2018) 'Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP', Journal of Physics D: Applied Physics, In Press, doi:10.1088/1361-6463/aabf6ben
dc.identifier.doi10.1088/1361-6463/aabf6b
dc.identifier.endpage24en
dc.identifier.issn1361-6463
dc.identifier.issn0022-3727
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/5873
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I3000/IE/Controlling deterministically engineered III-V nanostructures: towards quantum information devices/en
dc.relation.urihttp://iopscience.iop.org/article/10.1088/1361-6463/aabf6b
dc.rights© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aabf6b.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectvan Hoof structuresen
dc.subjectSpectroscopyen
dc.subjectX-ray photoelectron spectroscopen
dc.subjectadsorptionen
dc.subjectContactless electroreflectanceen
dc.subjectCERen
dc.titleContactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InPen
dc.typeArticle (peer-reviewed)en
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