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InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter
Zubialevich, Vitaly Z.
Rzheutski, Mikalai V.
Sadler, Thomas C.
Alam, Shahab N.
Lutsenko, Evgenii V.
Yablonskii, Gennadii P.
Parbrook, Peter J.
The structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I-type II band lineup transition in the InAlN-AlGaN system.
Chemical-vapor-deposition , Ingan , Luminescence , Sapphire , Layers
Zubialevich, V. Z., Rzheutski, M. V., Li, H., Sadler, T. C., Alam, S. N., Bhardwaj, V., Lutsenko, E. V., Yablonskii, G. P. and Parbrook, P. J. (2018) 'InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter', Journal of Luminescence, 194, pp. 797-802. doi:10.1016/j.jlumin.2017.09.053