InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter
Zubialevich, Vitaly Z.; Rzheutski, Mikalai V.; Li, Haoning; Sadler, Thomas C.; Alam, Shahab N.; Bhardwaj, Vipul; Lutsenko, Evgenii V.; Yablonskii, Gennadii P.; Parbrook, Peter J.
Date:
2017-09-23
Copyright:
© 2017, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
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Access to this article is restricted until 24 months after publication by request of the publisher
Restriction lift date:
2019-09-23
Citation:
Zubialevich, V. Z., Rzheutski, M. V., Li, H., Sadler, T. C., Alam, S. N., Bhardwaj, V., Lutsenko, E. V., Yablonskii, G. P. and Parbrook, P. J. (2018) 'InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter', Journal of Luminescence, 194, pp. 797-802. doi:10.1016/j.jlumin.2017.09.053
Abstract:
The structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I-type II band lineup transition in the InAlN-AlGaN system.
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Except where otherwise noted, this item's license is described as © 2017, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.