InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

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Zubialevich, Vitaly Z.
Rzheutski, Mikalai V.
Li, Haoning
Sadler, Thomas C.
Alam, Shahab N.
Bhardwaj, Vipul
Lutsenko, Evgenii V.
Yablonskii, Gennadii P.
Parbrook, Peter J.
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Elsevier B.V.
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The structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I-type II band lineup transition in the InAlN-AlGaN system.
Chemical-vapor-deposition , Ingan , Luminescence , Sapphire , Layers
Zubialevich, V. Z., Rzheutski, M. V., Li, H., Sadler, T. C., Alam, S. N., Bhardwaj, V., Lutsenko, E. V., Yablonskii, G. P. and Parbrook, P. J. (2018) 'InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter', Journal of Luminescence, 194, pp. 797-802. doi:10.1016/j.jlumin.2017.09.053