Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon

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dc.contributor.author Bilousov, Oleksandr V.
dc.contributor.author Carvajal, Joan J.
dc.contributor.author Vilalta-Clemente, A.
dc.contributor.author Ruterana, P.
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2018-05-15T15:38:40Z
dc.date.available 2018-05-15T15:38:40Z
dc.date.issued 2014-01-07
dc.identifier.citation Bilousov, O. V., Carvajal, J. J., Vilalta-Clemente, A., Ruterana, P., Díaz, F., Aguiló, M. and O’Dwyer, C. (2014) 'Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon', Chemistry of Materials, 26(2), pp. 1243-1249. doi: 10.1021/cm4037023 en
dc.identifier.volume 26 en
dc.identifier.issued 2 en
dc.identifier.startpage 1243 en
dc.identifier.endpage 1249 en
dc.identifier.issn 0897-4756
dc.identifier.uri http://hdl.handle.net/10468/6117
dc.identifier.doi 10.1021/cm4037023
dc.description.abstract Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-κ oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime. en
dc.description.sponsorship Irish Research Council (New Foundations Award); University College Cork (UCC Strategic Research Fund); Generalitat de Catalunya (Catalan Authority under Project 2009SGR235); Spansh Government ( Projects MAT2011-29255-C02-02 and TEC2010-21574-C02) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri http://pubs.acs.org/doi/abs/10.1021/cm4037023
dc.rights © 2014 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm4037023. en
dc.subject Porous silicon en
dc.subject Chemical vapor deposition en
dc.subject Gallium nitride en
dc.subject Interfaces (materials) en
dc.subject MOS devices en
dc.subject Semiconducting silicon en
dc.subject Silicon en
dc.subject Composition analysis en
dc.subject Electrical measurement en
dc.subject Growth regime en
dc.subject N-type conduction en
dc.subject P-Type conduction en
dc.subject Polycrystalline en
dc.subject Polycrystalline layers en
dc.subject Single-step en
dc.title Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-03T11:21:25Z
dc.description.version Accepted Version en
dc.internal.rssid 241769884
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Sixth Framework Programme en
dc.contributor.funder University College Cork en
dc.contributor.funder Irish Research Council en
dc.contributor.funder Generalitat de Catalunya en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/213238/EU/High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN)/RAINBOW en


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