Monolithic integration of patterned BaTiO3 thin films on Ge wafers
Ponath, Patrick; Posadas, Agham; Schmidt, Michael; Kelleher, Anne-Marie; White, Mary; O'Connell, Dan; Hurley, Paul K.; Duffy, Ray; Demkov, Alexander A.
Date:
2018-05
Copyright:
© 2018 the authors. Published by the AVS.
Full text restriction information:
Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:
2019-05-01
Citation:
Ponath, P., Posadas, A., Schmidt, M., Kelleher, A.-M., White, M., O'Connell, D., Hurley, P. K., Duffy, R. and Demkov, A. A. (2018) 'Monolithic integration of patterned BaTiO3 thin films on Ge wafers', Journal of Vacuum Science & Technology B, 36(3), 031206 (5pp). doi: 10.1116/1.5026109
Abstract:
Titanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. Here, the authors report the selective area in finestra growth of highly crystalline BaTiO3 (BTO) within photolithographically defined openings of a sacrificial SiO2 layer on a Ge (001) wafer by molecular beam epitaxy. After the BaTiO3 deposition, the sacrificial SiO2 can be etched away, revealing isolated nanoscale gate stacks circumventing the need to etch the titanate thin film. Reflection high-energy electron diffraction in conjunction with scanning electron microscopy is carried out to confirm the crystallinity of the samples. X-ray diffraction is performed to determine the out-of-plane lattice constant and crystal quality of the BTO film. Electrical measurements are performed on electrically isolated Pt/BaTiO3/SrTiO3/Ge capacitor devices.
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