Monolithic integration of patterned BaTiO3 thin films on Ge wafers

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dc.contributor.author Ponath, Patrick
dc.contributor.author Posadas, Agham
dc.contributor.author Schmidt, Michael
dc.contributor.author Kelleher, Anne-Marie
dc.contributor.author White, Mary
dc.contributor.author O'Connell, Dan
dc.contributor.author Hurley, Paul K.
dc.contributor.author Duffy, Ray
dc.contributor.author Demkov, Alexander A.
dc.date.accessioned 2018-05-24T14:12:28Z
dc.date.available 2018-05-24T14:12:28Z
dc.date.issued 2018-05
dc.identifier.citation Ponath, P., Posadas, A., Schmidt, M., Kelleher, A.-M., White, M., O'Connell, D., Hurley, P. K., Duffy, R. and Demkov, A. A. (2018) 'Monolithic integration of patterned BaTiO3 thin films on Ge wafers', Journal of Vacuum Science & Technology B, 36(3), 031206 (5pp). doi: 10.1116/1.5026109 en
dc.identifier.volume 36 en
dc.identifier.issued 3 en
dc.identifier.startpage 31206-1 en
dc.identifier.endpage 31206-5 en
dc.identifier.issn 2166-2746
dc.identifier.uri http://hdl.handle.net/10468/6189
dc.identifier.doi 10.1116/1.5026109
dc.description.abstract Titanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. Here, the authors report the selective area in finestra growth of highly crystalline BaTiO3 (BTO) within photolithographically defined openings of a sacrificial SiO2 layer on a Ge (001) wafer by molecular beam epitaxy. After the BaTiO3 deposition, the sacrificial SiO2 can be etched away, revealing isolated nanoscale gate stacks circumventing the need to etch the titanate thin film. Reflection high-energy electron diffraction in conjunction with scanning electron microscopy is carried out to confirm the crystallinity of the samples. X-ray diffraction is performed to determine the out-of-plane lattice constant and crystal quality of the BTO film. Electrical measurements are performed on electrically isolated Pt/BaTiO3/SrTiO3/Ge capacitor devices. en
dc.description.sponsorship Air Force Office of Scientific Research (Grant Nos. FA9550-14-1-0090) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Vacuum Society; AIP Publishing en
dc.relation.uri https://avs.scitation.org/doi/abs/10.1116/1.5026109
dc.rights © 2018 the authors. Published by the AVS. en
dc.subject Ferroelectricity en
dc.subject X-ray diffraction en
dc.subject Thin films en
dc.subject Epitaxy en
dc.subject Semiconductor device design en
dc.subject Electron diffraction en
dc.title Monolithic integration of patterned BaTiO3 thin films on Ge wafers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2019-05-01
dc.date.updated 2018-05-24T13:59:45Z
dc.description.version Published Version en
dc.internal.rssid 438880727
dc.contributor.funder Air Force Office of Scientific Research en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal Of Vacuum Science & Technology B en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/ en


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