Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

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Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

Geaney, Hugh; Dickinson, Calum; O'Dwyer, Colm; Mullane, Emma; Singh, Ajay; Ryan, Kevin M.
Date: 2012-10-29
Copyright: © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm302066n
Related: https://pubs.acs.org/doi/abs/10.1021/cm302066n
Citation: Geaney, H., Dickinson, C., O’Dwyer, C., Mullane, E., Singh, A. and Ryan, K. M. (2012) 'Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System', Chemistry of Materials, 24(22), pp. 4319-4325. doi: 10.1021/cm302066n
Published Version: 10.1021/cm302066n

Abstract:

Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.

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