Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system
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Accepted version
Date
2012-10-29
Authors
Geaney, Hugh
Dickinson, Calum
O'Dwyer, Colm
Mullane, Emma
Singh, Ajay
Ryan, Kevin M.
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society (ACS)
Published Version
Abstract
Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.
Description
Keywords
Copper , High boiling point solvent synthesis , Silicide nanowires , X-ray photoelectron spectroscopy
Citation
Geaney, H., Dickinson, C., O’Dwyer, C., Mullane, E., Singh, A. and Ryan, K. M. (2012) 'Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System', Chemistry of Materials, 24(22), pp. 4319-4325. doi: 10.1021/cm302066n
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Copyright
© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm302066n