Brennan, B.; Galatage, R. V.; Thomas, K.; Pelucchi, Emanuele; Hurley, Paul K.; Kim, J.; Hinkle, C. L.; Vogel, E. M.; Wallace, R. M.
(AIP Publishing, 2013)
InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device ...