Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

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Date
2008-10
Authors
Lynch, Robert P.
O'Dwyer, Colm
Quill, Nathan
Nakahara, Shohei
Newcomb, Simon B.
Buckley, D. Noel
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Electrochemical Society
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Abstract
This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.
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Keywords
Electric conductivity , Carrier concentration , Crystals , Semiconductor materials , Anodization , Crystallographic directions , Inp , Porous structures , Propagation mechanisms , Uniform diameters
Citation
Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404.
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© 2008 ECS - The Electrochemical Society