Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

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dc.contributor.authorLynch, Robert P.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorQuill, Nathan
dc.contributor.authorNakahara, Shohei
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorBuckley, D. Noel
dc.date.accessioned2018-06-14T14:44:51Z
dc.date.available2018-06-14T14:44:51Z
dc.date.issued2008-10
dc.date.updated2018-06-11T10:32:19Z
dc.description.abstractThis paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404.en
dc.identifier.doi10.1149/1.2982579
dc.identifier.endpage404en
dc.identifier.issn1938-5862
dc.identifier.journaltitleElectrochemical Society Transactionsen
dc.identifier.startpage393en
dc.identifier.urihttps://hdl.handle.net/10468/6306
dc.identifier.volume16en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.ispartofPorous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting; Honolulu, HI; United States; 12 October 2008 through 17 October 2008; Code 75747
dc.relation.urihttp://ecst.ecsdl.org/content/16/3/393.abstract
dc.rights© 2008 ECS - The Electrochemical Societyen
dc.subjectElectric conductivityen
dc.subjectCarrier concentrationen
dc.subjectCrystalsen
dc.subjectSemiconductor materialsen
dc.subjectAnodizationen
dc.subjectCrystallographic directionsen
dc.subjectInpen
dc.subjectPorous structuresen
dc.subjectPropagation mechanismsen
dc.subjectUniform diametersen
dc.titlePreferential <111>A pore propagation mechanism in n-InP anodized in KOHen
dc.typeArticle (peer-reviewed)en
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