Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

Lynch, Robert P.; O'Dwyer, Colm; Quill, Nathan; Nakahara, Shohei; Newcomb, Simon B.; Buckley, D. Noel

Preferential <111>A pore propagation mechanism in n-InP anodized in KOH

Files

ECT000393-f.pdf(858.77 KB)

Accepted version

Date

2008-10

Authors

Lynch, Robert P.

O'Dwyer, Colm

Quill, Nathan

Nakahara, Shohei

Newcomb, Simon B.

Buckley, D. Noel

Publisher

Electrochemical Society

Published Version

10.1149/1.2982579

Abstract

This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.

Keywords

Electric conductivity , Carrier concentration , Crystals , Semiconductor materials , Anodization , Crystallographic directions , Inp , Porous structures , Propagation mechanisms , Uniform diameters

Citation

Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404.