Rectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor deposition

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dc.contributor.author Carvajal, Joan J.
dc.contributor.author Mena, Josue
dc.contributor.author Aixart, J.
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.date.accessioned 2018-06-14T15:16:44Z
dc.date.available 2018-06-14T15:16:44Z
dc.date.issued 2017-09
dc.identifier.citation Carvajal, J. J., Mena, J., Aixart, J., O'Dwyer, C., Díaz, F. and Aguiló, M. (2017) 'Rectifiers, MOS Diodes and LEDs Made of Fully Porous GaN Produced by Chemical Vapor Deposition', ECS Journal of Solid State Science and Technology, 6(10), pp. R143-R148. doi: 10.1149/2.0041710jss en
dc.identifier.volume 6 en
dc.identifier.startpage R143 en
dc.identifier.endpage R148 en
dc.identifier.issn 2162-8769
dc.identifier.uri http://hdl.handle.net/10468/6307
dc.identifier.doi 10.1149/2.0041710jss
dc.description.abstract Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1–±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ∼13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications. en
dc.description.sponsorship Ministerio de Economía, Industria y Competitividad, Gobierno de España (Spanish Government under projects TEC2014-55948-R and Mineco/AEI/FEDER MAT2016-75716-C2-1-R); Generalitat de Catalunya (Catalan Authority under project 2014SGR1358); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia awards 2010ICREA-02) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.uri http://jss.ecsdl.org/content/6/10/R143.abstract
dc.rights © 2017 The Electrochemical Society en
dc.subject Chemical vapor deposition en
dc.subject Chemical vapor depositions (CVD) en
dc.subject Dielectric interlayers en
dc.subject Growth steps en
dc.subject High resistivity en
dc.subject Metallic alloys en
dc.subject P-n junction en
dc.subject Turn-on voltages en
dc.subject Wide band gap en
dc.subject Binary alloys en
dc.subject Deposition en
dc.subject Diodes en
dc.subject Electric rectifiers en
dc.subject Gallium alloys en
dc.subject Gallium compounds en
dc.subject Gallium nitride en
dc.subject Leakage currents en
dc.subject Light emitting diodes en
dc.subject Magnesium alloys en
dc.subject Magnesium compounds en
dc.subject Porosity en
dc.subject Semiconductor junctions en
dc.subject Vapor deposition en
dc.title Rectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor deposition en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-06-11T21:05:41Z
dc.description.version Accepted Version en
dc.internal.rssid 420607166
dc.contributor.funder Ministerio de Economía, Industria y Competitividad, Gobierno de España en
dc.contributor.funder Generalitat de Catalunya en
dc.contributor.funder Institució Catalana de Recerca i Estudis Avançats en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Journal of Solid State Science and Technology en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/15/TIDA/2893/IE/Advanced Battery Materials for High Volumetric Energy Density Li-ion Batteries for Remote Off-Grid Power/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2581/IE/Diffractive optics and photonic probes for efficient mouldable 3D printed battery skin materials for portable electronic devices/ en


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