Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly

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dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Ghoshal, Tandra
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Morris, Michael A.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2018-07-10T10:51:45Z
dc.date.available 2018-07-10T10:51:45Z
dc.date.issued 2018-06-30
dc.identifier.citation Gangnaik, A. S., Ghoshal, T., Georgiev, Y. M., Morris, M. A. and Holmes, J. D. (2018) 'Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly', Journal of Colloid and Interface Science. doi:10.1016/j.jcis.2018.06.018 en
dc.identifier.issn 0021-9797
dc.identifier.issn 1095-7103
dc.identifier.uri http://hdl.handle.net/10468/6446
dc.identifier.doi 10.1016/j.jcis.2018.06.018
dc.description.abstract Films of self assembled diblock copolymers (BCPs) have attracted significant attention for generating semiconductor nanoarrays of sizes below 100 nm through a simple low cost approach for device fabrication. A challenging abstract is controlling microdomain orientation and ordering dictated by complex interplay of surface energies, polymer-solvent interactions and domain spacing. In context, microphase separated poly (styrene-b-ethylene oxide) (PS-b-PEO) thin films is illustrated to fabricate nanopatterns on silicon and germanium materials trenches. The trenched templates was produced by simple electron beam lithography using hydrogen silsesquioxane (HSQ) resist. The orientation of PEO, minority cylinder forming block, was controlled by controlling trench width and varying solvent annealing parameters viz. temperature, time etc. A noticeable difference in microdomain orientation was observed for Si and Ge trenches processed under same conditions. The Ge trenches promoted horizontal orientations compared to Si due to difference in surface properties without any prior surface treatments. This methodology allows to create Ge nanopatterns for device fabrication since native oxides on Ge often induce patterning challenges. Subsequently, a selective metal inclusion method was used to form hardmask nanoarrays to pattern transfer into those substrates through dry etching. The hardmask allows to create good fidelity, low line edge roughness (LER) materials nanopatterns. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier Inc. en
dc.rights © 2018, Elsevier Inc. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Germanium en
dc.subject Nanopatterns en
dc.subject Self-assembly en
dc.subject Trench en
dc.subject Pattern transfer en
dc.title Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 24 months after publication by request of the publisher. en
dc.check.date 2020-06-30
dc.date.updated 2018-07-10T10:45:42Z
dc.description.version Accepted Version en
dc.internal.rssid 444828257
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Colloid and Interface Science en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.bibliocheck In press. Check for vol. / issue / page numbers. Amend citation as necessary.
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/ en


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© 2018, Elsevier Inc. All rights reserved.  This manuscript version is made available under the CC-BY-NC-ND 4.0 license. Except where otherwise noted, this item's license is described as © 2018, Elsevier Inc. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
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