Epitaxial post-implant recrystallization in germanium nanowires

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Kelly, Róisín A.
Liedke, Bartosz
Baldauf, Stefan
Gangnaik, Anushka S.
Biswas, Subhajit
Georgiev, Yordan M.
Holmes, Justin D.
Posselt, Matthias
Petkov, Nikolay
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American Chemical Society (ACS)
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As transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal-oxide semiconductor (CMOS) devices.
Germanium , Ion bombardment , Ion implantation , Metals , Molecular dynamics , MOS devices , Nanowires , Neural prostheses , Recovery , Recrystallization (metallurgy) , Semiconductor devices , Semiconductor doping , Complementary metal oxide semiconductors , Crystal recovery , Extended defect , Germanium nanowires , Germaniums (Ge) , Mis-orientation , Nanowires (NWs) , Solid phase epitaxial growth , Recrystallization , Germanium , Nanowire , Ion irradiation , Defect
Kelly, R. A., Liedke, B., Baldauf, S., Gangnaik, A., Biswas, S., Georgiev, Y., Holmes, J. D., Posselt, M. and Petkov, N. (2015) 'Epitaxial Post-Implant Recrystallization in Germanium Nanowires', Crystal Growth & Design, 15(9), pp. 4581-4590. doi: 10.1021/acs.cgd.5b00836
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© 2015 American Chemical Society. This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Crystal Growth & Design, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.cgd.5b00836