Epitaxial post-implant recrystallization in germanium nanowires

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dc.contributor.author Kelly, Róisín A.
dc.contributor.author Liedke, Bartosz
dc.contributor.author Baldauf, Stefan
dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Biswas, Subhajit
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Posselt, Matthias
dc.contributor.author Petkov, Nikolay
dc.date.accessioned 2018-08-03T14:25:31Z
dc.date.available 2018-08-03T14:25:31Z
dc.date.issued 2015-08-14
dc.identifier.citation Kelly, R. A., Liedke, B., Baldauf, S., Gangnaik, A., Biswas, S., Georgiev, Y., Holmes, J. D., Posselt, M. and Petkov, N. (2015) 'Epitaxial Post-Implant Recrystallization in Germanium Nanowires', Crystal Growth & Design, 15(9), pp. 4581-4590. doi: 10.1021/acs.cgd.5b00836 en
dc.identifier.volume 15 en
dc.identifier.issued 9 en
dc.identifier.startpage 4581 en
dc.identifier.endpage 4590 en
dc.identifier.issn 1528-7483
dc.identifier.uri http://hdl.handle.net/10468/6577
dc.identifier.doi 10.1021/acs.cgd.5b00836
dc.description.abstract As transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal-oxide semiconductor (CMOS) devices. en
dc.description.sponsorship Deutsche Forschungsgemeinschaft (Grant No. BR 1520/14-1) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri http://pubs.acs.org/journal/cgdefu
dc.rights © 2015 American Chemical Society. This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Crystal Growth & Design, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.cgd.5b00836 en
dc.subject Germanium en
dc.subject Ion bombardment en
dc.subject Ion implantation en
dc.subject Metals en
dc.subject Molecular dynamics en
dc.subject MOS devices en
dc.subject Nanowires en
dc.subject Neural prostheses en
dc.subject Recovery en
dc.subject Recrystallization (metallurgy) en
dc.subject Semiconductor devices en
dc.subject Semiconductor doping en
dc.subject Complementary metal oxide semiconductors en
dc.subject Crystal recovery en
dc.subject Extended defect en
dc.subject Germanium nanowires en
dc.subject Germaniums (Ge) en
dc.subject Mis-orientation en
dc.subject Nanowires (NWs) en
dc.subject Solid phase epitaxial growth en
dc.subject Recrystallization en
dc.subject Germanium en
dc.subject Nanowire en
dc.subject Ion irradiation en
dc.subject Defect en
dc.title Epitaxial post-implant recrystallization in germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-02T18:56:27Z
dc.description.version Submitted Version en
dc.internal.rssid 318345284
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Deutsche Forschungsgemeinschaft en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Crystal Growth and Design en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1623/IE/N-type doping in germanium for sub-20nm technology CMOS devices/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/ en


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