Seedless growth of sub-10 nm germanium nanowires
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Accepted version
Date
2010-09-13
Authors
Hobbs, Richard G.
Barth, Sven
Petkov, Nikolay
Zirngast, Michaela
Marschner, Christoph
Morris, Michael A.
Holmes, Justin D.
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society (ACS)
Published Version
Abstract
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small as 6 nm without the need for a metal catalyst. The nanowires, synthesized using the purpose-built precursor hexakis(trimethylsilyl)digermane, exhibit high aspect ratios (>1000) while maintaining a uniform core diameter along their length. Additionally, the nanowires are encased in an amorphous shell of material derived from the precursor, which acts to passivate their surfaces and isolates the Ge seed particles from which the nanowires grow. The diameter of the nanowires was found to depend on the synthesis temperature employed. Specifically, there is a linear relationship between the inverse radius of the nanowires and the synthesis temperature, which can be explained by a model for the size-dependent melting of simple metals.
Description
Keywords
Nanowires , Germanium , Nanowire , Aspect ratio , Catalysts , Crystal structure , Materials , Morphology , Nanotechnology , Scanning electron microscopy , Semiconductor , Synthesis , Temperature , Transmission electron microscopy , X ray diffraction
Citation
Hobbs, R. G., Barth, S., Petkov, N., Zirngast, M., Marschner, C., Morris, M. A. and Holmes, J. D. (2010) 'Seedless Growth of Sub-10 nm Germanium Nanowires', Journal of the American Chemical Society, 132(39), pp. 13742-13749.
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Copyright
© 2010 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/journal/jacsat/about.html