Seedless growth of sub-10 nm germanium nanowires

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dc.contributor.author Hobbs, Richard G.
dc.contributor.author Barth, Sven
dc.contributor.author Petkov, Nikolay
dc.contributor.author Zirngast, Michaela
dc.contributor.author Marschner, Christoph
dc.contributor.author Morris, Michael A.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2018-08-28T15:23:24Z
dc.date.available 2018-08-28T15:23:24Z
dc.date.issued 2010-09-13
dc.identifier.citation Hobbs, R. G., Barth, S., Petkov, N., Zirngast, M., Marschner, C., Morris, M. A. and Holmes, J. D. (2010) 'Seedless Growth of Sub-10 nm Germanium Nanowires', Journal of the American Chemical Society, 132(39), pp. 13742-13749. en
dc.identifier.volume 132 en
dc.identifier.startpage 13742 en
dc.identifier.endpage 13749 en
dc.identifier.issn 0002-7863
dc.identifier.uri http://hdl.handle.net/10468/6651
dc.identifier.doi 10.1021/ja1035368
dc.description.abstract We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small as 6 nm without the need for a metal catalyst. The nanowires, synthesized using the purpose-built precursor hexakis(trimethylsilyl)digermane, exhibit high aspect ratios (>1000) while maintaining a uniform core diameter along their length. Additionally, the nanowires are encased in an amorphous shell of material derived from the precursor, which acts to passivate their surfaces and isolates the Ge seed particles from which the nanowires grow. The diameter of the nanowires was found to depend on the synthesis temperature employed. Specifically, there is a linear relationship between the inverse radius of the nanowires and the synthesis temperature, which can be explained by a model for the size-dependent melting of simple metals. en
dc.description.sponsorship Higher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri http://pubs.acs.org/doi/10.1021/ja1035368
dc.rights © 2010 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/journal/jacsat/about.html en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Nanowire en
dc.subject Aspect ratio en
dc.subject Catalysts en
dc.subject Crystal structure en
dc.subject Materials en
dc.subject Morphology en
dc.subject Nanotechnology en
dc.subject Scanning electron microscopy en
dc.subject Semiconductor en
dc.subject Synthesis en
dc.subject Temperature en
dc.subject Transmission electron microscopy en
dc.subject X ray diffraction en
dc.title Seedless growth of sub-10 nm germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-06T15:35:31Z
dc.description.version Accepted Version en
dc.internal.rssid 54800169
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of the American Chemical Society en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/ en


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